Journal des systèmes électriques et électroniques

Advanced Energy Materials 2019: Reactive plasma processes for formation of high-mobility IGZO thin film transistors - Yuichi Setsuhara - Osaka University

Abstract

Yuichi Setsuhara

Receptive plasma measure frameworks have been created by means of establishment of inductively-coupled plasmas (ICP) continued with low-inductance radio wire (LIA) for low-temperature manufacture of adaptable gadgets, which require enormous territory and low harm measures with reactivity control abilities at low substrate temperature. Significant favorable position of the receptive handling framework is that the reactivity during film-testimony cycles can be improved and controlled through low-harm and high-thickness plasma creation for low-temperature preparing of gadgets.